PART |
Description |
Maker |
17572 17572-G |
HTSNK. B X-FLOW. .9H LOW FLOW. THRU HOLE HTSNKB型X流0.9 低流量。通孔
|
Vicor, Corp. VICOR[Vicor Corporation]
|
15989 15989-A |
BOX 2.13X1.38X.58 W/CLP BLK HTSNK B LONG .9H LOW FLOW, THREADED HTSNK B LONG .9H LOW FLOW THREADED
|
VICOR[Vicor Corporation]
|
18068 18068-6 |
HTSNK A X-FLOW .4H LOW FLOW THRU HOLE HTSNK, A X-FLOW, .4H LOW FLOW, THRU HOLE
|
VICOR[Vicor Corporation]
|
15971 15971-9 |
HTSNK C LONG. .911 LOW FLOW. THREADED HTSNK, C LONG. .911 LOW FLOW. THREADED
|
VICOR[Vicor Corporation]
|
15975 15975-B |
BOX 2.13 X 1.38 X.58 PLASTIC BLK BOX 2.13 X 1.38 X.58 PLASTIC GRY HTSNK A LONG .9H LOW FLOW. THREADED
|
VICOR[Vicor Corporation]
|
CY7C1475V33-133BGXI CY7C1475V33-133BGI CY7C1475V33 |
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 8.5 ns, PBGA165 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 6.5 ns, PQFP100 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构B>72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM) 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL?/a> Architecture 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL垄芒 Architecture
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
|
EDI2CG272128V9D1 EDI2CG272128V12D1 EDI2CG272128V15 |
2x128Kx72, 3.3V S nc/S nc Burst Flow-Through(2x128Kx72, 3.3Vns,同步/同步脉冲静态RAM模块(流通结构)) 2x128Kx72, 3.3V S nc/S nc Burst Flow-Through(2x128Kx72, 3.3V2ns,同步/同步脉冲静态RAM模块(流通结构)) 2x128Kx72, 3.3V S nc/S nc Burst Flow-Through(2x128Kx72, 3.3V5ns,同步/同步脉冲静态RAM模块(流通结构)) 2x128Kx72.3VS数控/ s的数控突发流量通过x128Kx72.3伏,15纳秒,同同步脉冲静态内存模块(流通结构) 2x128Kx72.3VS数控/ s的数控突发流量通过x128Kx72.3伏,12ns,同同步脉冲静态内存模块(流通结构) 2x128Kx72.3VS数控/ s的数控突发流量通过x128Kx72.3伏,纳秒,同同步脉冲静态内存模块(流通结构) SSRAM Modules 的SSRAM模块 2x128Kx72, 3.3V Sync/Sync Burst Flow-Through(2x128Kx72, 3.3V.5ns,同步/同步脉冲静态RAM模块(流通结构)) 2x128Kx72.3同步/同步突发流量通过2x128Kx72.3伏,8.5ns,同同步脉冲静态内存模块(流通结构) 2x128Kx72, 3.3V Sync/Sync Burst Flow-Through(2x128Kx72, 3.3V锛?.5ns,???/?????????RAM妯″?(娴??缁??锛?
|
White Electronic Designs Corporation
|
MC74LCX258DG MC74LCX32DR2 MC74LCX3205 MC74LCX374DR |
Low-Voltage CMOS Octal Buffer Flow Through Pinout; Package: TSSOP 20 LEAD; No of Pins: 20; Container: Tape and Reel; Qty per Container: 2500 LVC/LCX/Z SERIES, 8-BIT DRIVER, INVERTED OUTPUT, PDSO20 Low-Voltage CMOS Octal Buffer Flow Through Pinout With 5 V−Tolerant Inputs and Outputs (3−State, Inverting) Low-Voltage CMOS Octal Buffer Flow Through Pinout With 5 V?Tolerant Inputs and Outputs (3?State, Inverting) Low-Voltage CMOS Octal D-Type Flip-Flop With 5 V?Tolerant Inputs and Outputs (3?State, Non?Inverting) Low-Voltage CMOS Quad 2-Input OR Gate With 5 V?Tolerant Inputs Low-Voltage CMOS Quad 2-Input Multiplexer With 5 V?Tolerant Inputs and Outputs (3?State, Inverting)
|
ONSEMI[ON Semiconductor]
|
VO85536A-X0130 VO85516A-B200A VO85533A-X0020 VO855 |
KOMPAKTVENTIL HIGH FLOW DRUCKLUFT FEDER KOMPAKTVENTIL HIGH FLOW MAGNET FEDER KOMPAKTVENTIL HIGH FLOW DRUCKLUFT DRUCKL KOMPAKTVENTIL高流量DRUCKLUFT DRUCKL KOMPAKTVENTIL HIGH FLOW MAGNET MAGNET KOMPAKTVENTIL高流量磁
|
HIROSE ELECTRIC Co., Ltd. Bourns, Inc.
|
IDT71V3559S85BG IDT71V3559S75BG IDT71V3559S75BG8 I |
3.3V 256K x 18 ZBT Synchronous Flow-Through SRAM w/3.3V I/O 128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs
|
IDT Integrated Device Technology
|
CY7C1371D-100AXI CY7C1371D-100BGI CY7C1373D-100BZI |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 18兆位(为512k × 36/1M × 18)流体系结构,通过与NoBLTM的SRAM 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA119
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|